Solution Shearing of Sustainable Aluminum Oxide Thin Films for Compliance‐Free, Voltage‐Regulated Multi‐Bit Memristors

Solution Shearing of Sustainable Aluminum Oxide Thin Films for Compliance‐Free, Voltage‐Regulated Multi‐Bit Memristors

Abstract In this work, solution shearing approach is used to fabricate sustainable, de‐ionized water based 15 nm aluminum oxide (AlOx) thin films employing a combination of low‐temperature thermal annealing and deep UV exposure techniques. Their electrical performance is evaluated for memristive tec...

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Bibliographic Details
Main Authors: Preetam Dacha, Anju Kumari R, Darius Pohl, Angelika Wrzesińska‐Lashkova, Alexander Tahn, Bernd Rellinghaus, Yana Vaynzof, Stefan C. B. Mannsfeld
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Advanced Electronic Materials
Subjects:
AlOx
memristors
multi‐bit
solution processed
solution shearing
Online Access:https://doi.org/10.1002/aelm.202400698
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https://doi.org/10.1002/aelm.202400698

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