Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers

The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related to oxide thickness are discussed.

Saved in:
Bibliographic Details
Main Authors: M. A. Grado-Caffaro, M. Grado-Caffaro
Format: Article
Language:English
Published: Wiley 1998-01-01
Series:Active and Passive Electronic Components
Subjects:
Online Access:http://dx.doi.org/10.1155/1998/45270
Tags: Add Tag
No Tags, Be the first to tag this record!