Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films
The epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The valence state of the B-site elements is influ...
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| Format: | Article |
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AIP Publishing LLC
2025-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0267185 |
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| author | Xin Yuan Sheung Mei Ng PeiGen Li JingMing Liang Hon Fai Wong ChuangShi Feng Shuai Nan HongQuan Song Zhou Guan FuXiang Zhang Chi Wah Leung |
| author_facet | Xin Yuan Sheung Mei Ng PeiGen Li JingMing Liang Hon Fai Wong ChuangShi Feng Shuai Nan HongQuan Song Zhou Guan FuXiang Zhang Chi Wah Leung |
| author_sort | Xin Yuan |
| collection | DOAJ |
| description | The epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The valence state of the B-site elements is influenced by the introduction of oxygen vacancies, which in turn affects the spin state. Electrical properties were investigated across a broad temperature range (150–400 K), demonstrating significant resistivity variations of up to 3 orders of magnitude as a function of oxygen vacancies. The corresponding mechanisms of small polaron hopping and variable range hopping are discussed. This work explores the effect of oxygen vacancies on the structure and performance of L5BO3 high-entropy oxide films prepared under various oxygen pressures, offering foundational insights into the compositional manipulation of high-entropy oxides. |
| format | Article |
| id | doaj-art-5f426623fc4240afabf63487cee44874 |
| institution | Kabale University |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-5f426623fc4240afabf63487cee448742025-08-20T03:31:06ZengAIP Publishing LLCAIP Advances2158-32262025-06-01156065321065321-910.1063/5.0267185Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide filmsXin Yuan0Sheung Mei Ng1PeiGen Li2JingMing Liang3Hon Fai Wong4ChuangShi Feng5Shuai Nan6HongQuan Song7Zhou Guan8FuXiang Zhang9Chi Wah Leung10Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaDepartment of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaDepartment of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaDepartment of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaDepartment of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, ChinaDepartment of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaThe epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The valence state of the B-site elements is influenced by the introduction of oxygen vacancies, which in turn affects the spin state. Electrical properties were investigated across a broad temperature range (150–400 K), demonstrating significant resistivity variations of up to 3 orders of magnitude as a function of oxygen vacancies. The corresponding mechanisms of small polaron hopping and variable range hopping are discussed. This work explores the effect of oxygen vacancies on the structure and performance of L5BO3 high-entropy oxide films prepared under various oxygen pressures, offering foundational insights into the compositional manipulation of high-entropy oxides.http://dx.doi.org/10.1063/5.0267185 |
| spellingShingle | Xin Yuan Sheung Mei Ng PeiGen Li JingMing Liang Hon Fai Wong ChuangShi Feng Shuai Nan HongQuan Song Zhou Guan FuXiang Zhang Chi Wah Leung Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films AIP Advances |
| title | Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films |
| title_full | Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films |
| title_fullStr | Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films |
| title_full_unstemmed | Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films |
| title_short | Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films |
| title_sort | effect of oxygen vacancy modification on electrical properties of la cr0 2mn0 2fe0 2co0 2ni0 2 o3 high entropy perovskite oxide films |
| url | http://dx.doi.org/10.1063/5.0267185 |
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