Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films

The epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The valence state of the B-site elements is influ...

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Bibliographic Details
Main Authors: Xin Yuan, Sheung Mei Ng, PeiGen Li, JingMing Liang, Hon Fai Wong, ChuangShi Feng, Shuai Nan, HongQuan Song, Zhou Guan, FuXiang Zhang, Chi Wah Leung
Format: Article
Language:English
Published: AIP Publishing LLC 2025-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0267185
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