Lasers with double asymmetric barrier layers: Direct versus indirect capture of carriers into the lasing ground state in quantum dots
Abstract Static and dynamic characteristics of a quantum dot (QD) laser with double asymmetric barrier layers – an advanced type of semiconductor laser – are studied. Both direct and indirect capture of carriers into the lasing ground state in QDs is considered. The intradot relaxation of carriers,...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-12-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.70117 |
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