Formation of a gate dielectric of nanometer thickness by rapid thermal treatment
Investigations of the thickness and optical characteristics of thin SiO2 films obtained by one-, two-, or three-stage rapid thermal processing (RTP) at atmospheric pressure, pulses of 6, 12, and 20 s duration have been carried out. To obtain thin SiO2 films by the RTP method, N-type:Ph 4.5 Оhm/□ (10...
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2021-07-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/3114 |
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| author | N. S. Kovalchuk A. A. Omelchenko V. A. Pilipenko V. A. Solodukha D. V. Shestovski |
| author_facet | N. S. Kovalchuk A. A. Omelchenko V. A. Pilipenko V. A. Solodukha D. V. Shestovski |
| author_sort | N. S. Kovalchuk |
| collection | DOAJ |
| description | Investigations of the thickness and optical characteristics of thin SiO2 films obtained by one-, two-, or three-stage rapid thermal processing (RTP) at atmospheric pressure, pulses of 6, 12, and 20 s duration have been carried out. To obtain thin SiO2 films by the RTP method, N-type:Ph 4.5 Оhm/□ (100) silicon wafers were used as initial samples. The samples were preliminarily oxidized at 1000 °C of the obtained wet oxygen (SiO2 d = 100 nm), then the silicon oxide was completely removed in a solution of hydrofluoric acid, after which the wafers were subjected to chemical cleaning using the Radio Corporation of America (RCA) technology. Oxidation in a stationary oxygen atmosphere was carried out in one or two stages by heating the plates with a light pulse of different power up to maximum temperatures of 1035 – 1250 °C, as well as a three-stage process, where the final stage was annealing in a nitrogen atmosphere or in a forming gas (N2 97% + H2 3%). The characteristics of SiO2-Si barrier structures nitrided in N2, obtained by the RTP process by light fluxes with pulses of a second duration, were studied to improve the electrophysical parameters of gate oxides by the RTP method. It is of interest for integrated circuits (ICS) with a high density of the active regions of devices. |
| format | Article |
| id | doaj-art-5f2fae87157c4b3daffedd7e94debb3a |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2021-07-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-5f2fae87157c4b3daffedd7e94debb3a2025-08-20T03:38:35ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482021-07-0119410311210.35596/1729-7648-2021-19-4-103-1121714Formation of a gate dielectric of nanometer thickness by rapid thermal treatmentN. S. Kovalchuk0A. A. Omelchenko1V. A. Pilipenko2V. A. Solodukha3D. V. Shestovski4JSC “Integral” – “INTEGRAL” Holding Managing CompanyJSC “Integral” – “INTEGRAL” Holding Managing CompanyJSC “Integral” – “INTEGRAL” Holding Managing CompanyJSC “Integral” – “INTEGRAL” Holding Managing CompanyJSC “Integral” – “INTEGRAL” Holding Managing CompanyInvestigations of the thickness and optical characteristics of thin SiO2 films obtained by one-, two-, or three-stage rapid thermal processing (RTP) at atmospheric pressure, pulses of 6, 12, and 20 s duration have been carried out. To obtain thin SiO2 films by the RTP method, N-type:Ph 4.5 Оhm/□ (100) silicon wafers were used as initial samples. The samples were preliminarily oxidized at 1000 °C of the obtained wet oxygen (SiO2 d = 100 nm), then the silicon oxide was completely removed in a solution of hydrofluoric acid, after which the wafers were subjected to chemical cleaning using the Radio Corporation of America (RCA) technology. Oxidation in a stationary oxygen atmosphere was carried out in one or two stages by heating the plates with a light pulse of different power up to maximum temperatures of 1035 – 1250 °C, as well as a three-stage process, where the final stage was annealing in a nitrogen atmosphere or in a forming gas (N2 97% + H2 3%). The characteristics of SiO2-Si barrier structures nitrided in N2, obtained by the RTP process by light fluxes with pulses of a second duration, were studied to improve the electrophysical parameters of gate oxides by the RTP method. It is of interest for integrated circuits (ICS) with a high density of the active regions of devices.https://doklady.bsuir.by/jour/article/view/3114silicon oxidationsilicon oxide thicknessphotodissociationsilicon oxide uniformitydirect nitridingrefractive indexnitrogen concentration |
| spellingShingle | N. S. Kovalchuk A. A. Omelchenko V. A. Pilipenko V. A. Solodukha D. V. Shestovski Formation of a gate dielectric of nanometer thickness by rapid thermal treatment Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki silicon oxidation silicon oxide thickness photodissociation silicon oxide uniformity direct nitriding refractive index nitrogen concentration |
| title | Formation of a gate dielectric of nanometer thickness by rapid thermal treatment |
| title_full | Formation of a gate dielectric of nanometer thickness by rapid thermal treatment |
| title_fullStr | Formation of a gate dielectric of nanometer thickness by rapid thermal treatment |
| title_full_unstemmed | Formation of a gate dielectric of nanometer thickness by rapid thermal treatment |
| title_short | Formation of a gate dielectric of nanometer thickness by rapid thermal treatment |
| title_sort | formation of a gate dielectric of nanometer thickness by rapid thermal treatment |
| topic | silicon oxidation silicon oxide thickness photodissociation silicon oxide uniformity direct nitriding refractive index nitrogen concentration |
| url | https://doklady.bsuir.by/jour/article/view/3114 |
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