Formation of a gate dielectric of nanometer thickness by rapid thermal treatment

Formation of a gate dielectric of nanometer thickness by rapid thermal treatment

Investigations of the thickness and optical characteristics of thin SiO2 films obtained by one-, two-, or three-stage rapid thermal processing (RTP) at atmospheric pressure, pulses of 6, 12, and 20 s duration have been carried out. To obtain thin SiO2 films by the RTP method, N-type:Ph 4.5 Оhm/□ (10...

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Bibliographic Details
Main Authors: N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, D. V. Shestovski
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2021-07-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
silicon oxidation
silicon oxide thickness
photodissociation
silicon oxide uniformity
direct nitriding
refractive index
nitrogen concentration
Online Access:https://doklady.bsuir.by/jour/article/view/3114
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