High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging

High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging

Design, fabrication, and measurement of vertical Germanium (Ge) Photodiodes for highspeed, hard X-Ray imaging is presented. The devices used atmospheric-pressure epitaxial absorption layers, varying absorption layer thicknesses (10 &#x2013; 245 <inline-formula> <tex-math notation="...

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Bibliographic Details
Main Authors: Ziang Guo, Sergei Mistyuk, Arthur Carpenter, Charles E. Hunt
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
P-I-N diodes
Germanium
optical sensors
photodiodes
epitaxial layers
optical detectors
Online Access:https://ieeexplore.ieee.org/document/10632103/
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https://ieeexplore.ieee.org/document/10632103/

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