Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

In this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-...

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Bibliographic Details
Main Authors:	Ce Wang, Hong Zhou, Sami Alghamdi, Chunxu Su, Zhihong Liu, Kui Dang, Xuefeng Zheng, Xiaohua Ma, Peijun Ma, Yue Hao, Jincheng Zhang
Format:	Article
Language:	English
Published:	IEEE 2025-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Ga₂O₃ junction barrier power diode low work function high efficiency
Online Access:	https://ieeexplore.ieee.org/document/10945755/
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