Proposal and Simulation of <italic>&#x03B2;</italic>-Ga&#x2082;O&#x2083; Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

Proposal and Simulation of <italic>&#x03B2;</italic>-Ga&#x2082;O&#x2083; Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

In this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-...

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Bibliographic Details
Main Authors: Ce Wang, Hong Zhou, Sami Alghamdi, Chunxu Su, Zhihong Liu, Kui Dang, Xuefeng Zheng, Xiaohua Ma, Peijun Ma, Yue Hao, Jincheng Zhang
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ga₂O₃
junction barrier
power diode
low work function
high efficiency
Online Access:https://ieeexplore.ieee.org/document/10945755/
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