Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage
In this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-...
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2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10945755/ |
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| author | Ce Wang Hong Zhou Sami Alghamdi Chunxu Su Zhihong Liu Kui Dang Xuefeng Zheng Xiaohua Ma Peijun Ma Yue Hao Jincheng Zhang |
| author_facet | Ce Wang Hong Zhou Sami Alghamdi Chunxu Su Zhihong Liu Kui Dang Xuefeng Zheng Xiaohua Ma Peijun Ma Yue Hao Jincheng Zhang |
| author_sort | Ce Wang |
| collection | DOAJ |
| description | In this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-function anode metal to form a top electrode by reducing the <inline-formula> <tex-math notation="LaTeX">$\rm V_{on}$ </tex-math></inline-formula> of the diode at the forward state. A fin structure and metal/semiconductor (M/S) junction or PN HJ was employed to achieve an enhanced BV at the reverse state. An attempt to optimize the electrical characteristics of the device by modifying its structural parameters is also comprehensively analyzed in this work. The HJ SBD achieves a low <inline-formula> <tex-math notation="LaTeX">$\rm V_{on}$ </tex-math></inline-formula> of 0.57 V and a Power Figure of Merit (P-FOM) of 3.79 GW/cm2, simultaneously. The proposed structure provides a new approach for realizing high performance <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 SBDs with high reverse blocking and low loss capabilities. |
| format | Article |
| id | doaj-art-5ee99e5c08fb4374a3c912ce8d2199ef |
| institution | DOAJ |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-5ee99e5c08fb4374a3c912ce8d2199ef2025-08-20T03:09:08ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011333434210.1109/JEDS.2025.355640810945755Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown VoltageCe Wang0https://orcid.org/0009-0001-8321-4762Hong Zhou1https://orcid.org/0000-0002-0741-7568Sami Alghamdi2https://orcid.org/0000-0003-0465-6675Chunxu Su3https://orcid.org/0009-0006-8423-9829Zhihong Liu4Kui Dang5https://orcid.org/0000-0002-9484-2035Xuefeng Zheng6https://orcid.org/0000-0002-9410-3849Xiaohua Ma7https://orcid.org/0000-0002-1331-6253Peijun Ma8https://orcid.org/0000-0002-7000-4651Yue Hao9https://orcid.org/0000-0002-8081-2919Jincheng Zhang10https://orcid.org/0000-0001-7332-6704Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaElectrical and Computer Engineering Department, King Abdulaziz University, Jeddah, Saudi ArabiaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaKey Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, ChinaIn this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-function anode metal to form a top electrode by reducing the <inline-formula> <tex-math notation="LaTeX">$\rm V_{on}$ </tex-math></inline-formula> of the diode at the forward state. A fin structure and metal/semiconductor (M/S) junction or PN HJ was employed to achieve an enhanced BV at the reverse state. An attempt to optimize the electrical characteristics of the device by modifying its structural parameters is also comprehensively analyzed in this work. The HJ SBD achieves a low <inline-formula> <tex-math notation="LaTeX">$\rm V_{on}$ </tex-math></inline-formula> of 0.57 V and a Power Figure of Merit (P-FOM) of 3.79 GW/cm2, simultaneously. The proposed structure provides a new approach for realizing high performance <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 SBDs with high reverse blocking and low loss capabilities.https://ieeexplore.ieee.org/document/10945755/Ga₂O₃junction barrierpower diodelow work functionhigh efficiency |
| spellingShingle | Ce Wang Hong Zhou Sami Alghamdi Chunxu Su Zhihong Liu Kui Dang Xuefeng Zheng Xiaohua Ma Peijun Ma Yue Hao Jincheng Zhang Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage IEEE Journal of the Electron Devices Society Ga₂O₃ junction barrier power diode low work function high efficiency |
| title | Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage |
| title_full | Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage |
| title_fullStr | Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage |
| title_full_unstemmed | Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage |
| title_short | Proposal and Simulation of <italic>β</italic>-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage |
| title_sort | proposal and simulation of italic x03b2 italic ga x2082 o x2083 hetero junction schottky diodes with low work function anode and high breakdown voltage |
| topic | Ga₂O₃ junction barrier power diode low work function high efficiency |
| url | https://ieeexplore.ieee.org/document/10945755/ |
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