Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate
This work explores the dual-step epitaxial GaN (DSE-GaN) process for the selective area growth of GaN drains on Si (100) substrates, addressing critical challenges in melt-back etching and regrowth selectivity. The DSE-GaN process combines the superior material properties of GaN with the inherent ad...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0256900 |
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