Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate

Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate

This work explores the dual-step epitaxial GaN (DSE-GaN) process for the selective area growth of GaN drains on Si (100) substrates, addressing critical challenges in melt-back etching and regrowth selectivity. The DSE-GaN process combines the superior material properties of GaN with the inherent ad...

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Bibliographic Details
Main Authors: Cheng-Jun Huang, Shuo Hwai, Tsai-Fu Chung, Chien-Nan Hsiao, Bo-Cheng Lin, Hung-Ching Tsai, Chi Huang Lui, Edward. Yi Chang, Mau-Chung Frank Chang
Format: Article
Language:English
Published: AIP Publishing LLC 2025-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0256900
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http://dx.doi.org/10.1063/5.0256900

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