Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate
This work explores the dual-step epitaxial GaN (DSE-GaN) process for the selective area growth of GaN drains on Si (100) substrates, addressing critical challenges in melt-back etching and regrowth selectivity. The DSE-GaN process combines the superior material properties of GaN with the inherent ad...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0256900 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850249540458774528 |
|---|---|
| author | Cheng-Jun Huang Shuo Hwai Tsai-Fu Chung Chien-Nan Hsiao Bo-Cheng Lin Hung-Ching Tsai Chi Huang Lui Edward. Yi Chang Mau-Chung Frank Chang |
| author_facet | Cheng-Jun Huang Shuo Hwai Tsai-Fu Chung Chien-Nan Hsiao Bo-Cheng Lin Hung-Ching Tsai Chi Huang Lui Edward. Yi Chang Mau-Chung Frank Chang |
| author_sort | Cheng-Jun Huang |
| collection | DOAJ |
| description | This work explores the dual-step epitaxial GaN (DSE-GaN) process for the selective area growth of GaN drains on Si (100) substrates, addressing critical challenges in melt-back etching and regrowth selectivity. The DSE-GaN process combines the superior material properties of GaN with the inherent advantages of the Si (100) substrate by utilizing GaN as the drain in the Si n-MOSFET. On the Si (100) substrate, the wide-bandgap GaN drain can be designed to enhance the device’s breakdown voltage or enable the integration of GaN-based light-emitting diodes or laser diodes. In this work, based on the Hertz–Knudsen model and our experiment, we determined a process window that eliminates melt-back etching and achieves full selectivity growth. Experimental results reveal that optimizing the growth temperature and trimethylgallium flow rate effectively suppresses the formation of Ga droplet and the non-selective growth of GaN grains. Finally, we successfully demonstrated the significant potential of Si n-MOSFETs with GaN drains. The fabricated devices, featuring a GaN drain-first architecture and demonstrating ID–VG characteristics, highlight the seamless integration of GaN’s wide-bandgap properties with silicon’s CMOS technology. This approach shows significant potential for radar, radio frequency, and optoelectronic applications by combining GaN’s high breakdown electric field and direct bandgap with the scalability of Si. Our findings establish a robust pathway for heterogeneous integration, advancing the development of high-power and high-frequency systems-on-chip technologies. |
| format | Article |
| id | doaj-art-5ed6db76a611487ba08d43c33f5666fc |
| institution | OA Journals |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-5ed6db76a611487ba08d43c33f5666fc2025-08-20T01:58:28ZengAIP Publishing LLCAIP Advances2158-32262025-05-01155055119055119-610.1063/5.0256900Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrateCheng-Jun Huang0Shuo Hwai1Tsai-Fu Chung2Chien-Nan Hsiao3Bo-Cheng Lin4Hung-Ching Tsai5Chi Huang Lui6Edward. Yi Chang7Mau-Chung Frank Chang8International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electrical and Computer Engineering, University of California, Los Angeles (UCLA), Los Angeles, California 90095, USADepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanTaiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu 30010, TaiwanDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electrical and Computer Engineering, University of California, Los Angeles (UCLA), Los Angeles, California 90095, USAThis work explores the dual-step epitaxial GaN (DSE-GaN) process for the selective area growth of GaN drains on Si (100) substrates, addressing critical challenges in melt-back etching and regrowth selectivity. The DSE-GaN process combines the superior material properties of GaN with the inherent advantages of the Si (100) substrate by utilizing GaN as the drain in the Si n-MOSFET. On the Si (100) substrate, the wide-bandgap GaN drain can be designed to enhance the device’s breakdown voltage or enable the integration of GaN-based light-emitting diodes or laser diodes. In this work, based on the Hertz–Knudsen model and our experiment, we determined a process window that eliminates melt-back etching and achieves full selectivity growth. Experimental results reveal that optimizing the growth temperature and trimethylgallium flow rate effectively suppresses the formation of Ga droplet and the non-selective growth of GaN grains. Finally, we successfully demonstrated the significant potential of Si n-MOSFETs with GaN drains. The fabricated devices, featuring a GaN drain-first architecture and demonstrating ID–VG characteristics, highlight the seamless integration of GaN’s wide-bandgap properties with silicon’s CMOS technology. This approach shows significant potential for radar, radio frequency, and optoelectronic applications by combining GaN’s high breakdown electric field and direct bandgap with the scalability of Si. Our findings establish a robust pathway for heterogeneous integration, advancing the development of high-power and high-frequency systems-on-chip technologies.http://dx.doi.org/10.1063/5.0256900 |
| spellingShingle | Cheng-Jun Huang Shuo Hwai Tsai-Fu Chung Chien-Nan Hsiao Bo-Cheng Lin Hung-Ching Tsai Chi Huang Lui Edward. Yi Chang Mau-Chung Frank Chang Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate AIP Advances |
| title | Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate |
| title_full | Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate |
| title_fullStr | Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate |
| title_full_unstemmed | Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate |
| title_short | Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate |
| title_sort | optimization of non melt back etching and selectivity for selective area growth of gan drain on si 100 substrate |
| url | http://dx.doi.org/10.1063/5.0256900 |
| work_keys_str_mv | AT chengjunhuang optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate AT shuohwai optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate AT tsaifuchung optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate AT chiennanhsiao optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate AT bochenglin optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate AT hungchingtsai optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate AT chihuanglui optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate AT edwardyichang optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate AT mauchungfrankchang optimizationofnonmeltbacketchingandselectivityforselectiveareagrowthofgandrainonsi100substrate |