Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces

In the current study, an Au/BN/C microwave back-to-back Schottky device is designed and characterized. The device morphology and roughness were evaluated by means of scanning electron and atomic force microscopy. As verified by the Richardson–Schottky current conduction transport mechanism which is...

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Bibliographic Details
Main Authors: Hazem K. Khanfar, A. F. Qasrawi, Yasmeen Kh. Ghannam
Format: Article
Language:English
Published: Wiley 2017-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/2017/4791347
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