Technology Status and Development of SiC GTO Thyristor
In recent years, high-voltage power devices based on wide-band gap semiconductor material such as silicon carbide (SiC)have developed rapidly. Among high voltage SiC power devices, gate turn-off thyristor (GTO) has advantages such as high blocking voltage, high current , fast turn-off, low forward...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.100 |
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