Ferroelectric devices for artificial intelligence chips

The identification of ferroelectricity in oxides such as hafnium oxide, which are compatible with the contemporary semiconductor fabrication techniques, has contributed to a resurgence of ferroelectric devices in cutting-edge microelectronics. In a transistor structure, ferroelectric devices play th...

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Bibliographic Details
Main Authors: Jinshun Bi, Muhammad Faizan, Xuefei Liu, Yue Ma, Xu Wang, Viktor Stempitsky
Format: Article
Language:English
Published: Elsevier 2025-06-01
Series:Chip
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2709472325000036
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