Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation

In order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its ele...

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Main Authors: WANG Yafei, DAI Xiaoping, ZHOU Wei
Format: Article
Language:zho
Published: Editorial Office of Control and Information Technology 2016-01-01
Series:Kongzhi Yu Xinxi Jishu
Subjects:
Online Access:http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.04.007
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author WANG Yafei
DAI Xiaoping
ZHOU Wei
author_facet WANG Yafei
DAI Xiaoping
ZHOU Wei
author_sort WANG Yafei
collection DOAJ
description In order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its electrical characteristics, band structure and the interaction with substrate, the material was reproduced in Silvaco ATLAS device simulator. Results show that the correlation coefficient between electrical simulation data of the material model and the experimental data is above 0.9. This material modelling can be applied for improving the passivation process of diamond-like carbon film and investigating its doping characteristics.
format Article
id doaj-art-5b0db1de6be0407b92fecb740f6bf599
institution Kabale University
issn 2096-5427
language zho
publishDate 2016-01-01
publisher Editorial Office of Control and Information Technology
record_format Article
series Kongzhi Yu Xinxi Jishu
spelling doaj-art-5b0db1de6be0407b92fecb740f6bf5992025-08-25T06:55:30ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272016-01-0133343782333128Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device PassivationWANG YafeiDAI XiaopingZHOU WeiIn order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its electrical characteristics, band structure and the interaction with substrate, the material was reproduced in Silvaco ATLAS device simulator. Results show that the correlation coefficient between electrical simulation data of the material model and the experimental data is above 0.9. This material modelling can be applied for improving the passivation process of diamond-like carbon film and investigating its doping characteristics.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.04.007semiconductor devicediamond-like carbonpassivationSilvaco ATLASsimulation model
spellingShingle WANG Yafei
DAI Xiaoping
ZHOU Wei
Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
Kongzhi Yu Xinxi Jishu
semiconductor device
diamond-like carbon
passivation
Silvaco ATLAS
simulation model
title Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
title_full Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
title_fullStr Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
title_full_unstemmed Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
title_short Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
title_sort simulation modelling of diamond like carbon film for semiconductor device passivation
topic semiconductor device
diamond-like carbon
passivation
Silvaco ATLAS
simulation model
url http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.04.007
work_keys_str_mv AT wangyafei simulationmodellingofdiamondlikecarbonfilmforsemiconductordevicepassivation
AT daixiaoping simulationmodellingofdiamondlikecarbonfilmforsemiconductordevicepassivation
AT zhouwei simulationmodellingofdiamondlikecarbonfilmforsemiconductordevicepassivation