Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
In order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its ele...
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
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| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.04.007 |
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| _version_ | 1849224728843124736 |
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| author | WANG Yafei DAI Xiaoping ZHOU Wei |
| author_facet | WANG Yafei DAI Xiaoping ZHOU Wei |
| author_sort | WANG Yafei |
| collection | DOAJ |
| description | In order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its electrical characteristics, band structure and the interaction with substrate, the material was reproduced in Silvaco ATLAS device simulator. Results show that the correlation coefficient between electrical simulation data of the material model and the experimental data is above 0.9. This material modelling can be applied for improving the passivation process of diamond-like carbon film and investigating its doping characteristics. |
| format | Article |
| id | doaj-art-5b0db1de6be0407b92fecb740f6bf599 |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2016-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-5b0db1de6be0407b92fecb740f6bf5992025-08-25T06:55:30ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272016-01-0133343782333128Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device PassivationWANG YafeiDAI XiaopingZHOU WeiIn order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its electrical characteristics, band structure and the interaction with substrate, the material was reproduced in Silvaco ATLAS device simulator. Results show that the correlation coefficient between electrical simulation data of the material model and the experimental data is above 0.9. This material modelling can be applied for improving the passivation process of diamond-like carbon film and investigating its doping characteristics.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.04.007semiconductor devicediamond-like carbonpassivationSilvaco ATLASsimulation model |
| spellingShingle | WANG Yafei DAI Xiaoping ZHOU Wei Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation Kongzhi Yu Xinxi Jishu semiconductor device diamond-like carbon passivation Silvaco ATLAS simulation model |
| title | Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation |
| title_full | Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation |
| title_fullStr | Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation |
| title_full_unstemmed | Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation |
| title_short | Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation |
| title_sort | simulation modelling of diamond like carbon film for semiconductor device passivation |
| topic | semiconductor device diamond-like carbon passivation Silvaco ATLAS simulation model |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.04.007 |
| work_keys_str_mv | AT wangyafei simulationmodellingofdiamondlikecarbonfilmforsemiconductordevicepassivation AT daixiaoping simulationmodellingofdiamondlikecarbonfilmforsemiconductordevicepassivation AT zhouwei simulationmodellingofdiamondlikecarbonfilmforsemiconductordevicepassivation |