Simulation Modelling of Diamond-like Carbon Film for Semiconductor Device Passivation
In order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its ele...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.04.007 |
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| Summary: | In order to build the simulative model of diamond-like carbon, it used PECVD to deposite diamond-like carbon from quartz and silicon substrate, which was suitable for power semiconductor device as passivation layer. Band gap was measured through the spectrum absorption method. Combining with its electrical characteristics, band structure and the interaction with substrate, the material was reproduced in Silvaco ATLAS device simulator. Results show that the correlation coefficient between electrical simulation data of the material model and the experimental data is above 0.9. This material modelling can be applied for improving the passivation process of diamond-like carbon film and investigating its doping characteristics. |
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| ISSN: | 2096-5427 |