Surface morphology, electronic defects and passivation strategies at the p–n junction of Cu(In,Ga)(S,Se)2 solar cells

Surface morphology, electronic defects and passivation strategies at the p–n junction of Cu(In,Ga)(S,Se)2 solar cells

Based on the high power conversion efficiencies and compatibility toward large-area deposition techniques, Cu(In,Ga)(S,Se) _2 (CIGSSe) phototvoltaic absorbers are currently at the forefront of chalcopyrite thin-film solar cell technology. The performance of these solar cells is critically dependent...

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Bibliographic Details
Main Authors: Amala Elizabeth, Andreas May, Finnegan Volkamer, Florian Giesl, Hossam Elanzeery, Thomas Dalibor, Daniel Abou-Ras, Harry Mönig
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:JPhys Energy
Subjects:
chalcopyrite solar cells
defect physics
surface analysis
sulfur
scanning tunneling spectroscopy
Online Access:https://doi.org/10.1088/2515-7655/adb90b
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https://doi.org/10.1088/2515-7655/adb90b

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