Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Abstract A straightforward method is developed to produce ion‐gels (IGs) with surface roughness at the nanometer level using a solution‐shearing process, enabling the first successful growth of crystalline, small‐molecule organic semiconductor (OSC) films directly on the IG layer. The effectiveness...

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Bibliographic Details
Main Authors: Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Advanced Electronic Materials
Subjects:
EGOFETs
ion gel
ionic liquid
OFETs
small‐molecule organic semiconductors
solution shearing
Online Access:https://doi.org/10.1002/aelm.202400312
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https://doi.org/10.1002/aelm.202400312

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