Influence of Package Parasitic Parameters on Transient Current Distribution of Paralleled IGBT Chips

High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the difference of package parasitic parameters caused by in...

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Bibliographic Details
Main Authors: Hao SHI, Pengfei WU, Xinling TANG, Jianjun DONG, Ronggang HAN, Peng ZHANG
Format: Article
Language:zho
Published: State Grid Energy Research Institute 2019-08-01
Series:Zhongguo dianli
Subjects:
Online Access:https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.201805131
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