Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors
Impacts of post-heat treatment in a H2-contained (97% Ar and 3% H2) atmosphere on the switching kinetics of (001)-oriented AlScN capacitors are investigated. Fully saturated polarization can be obtained for all capacitors at frequencies of 50 Hz–50 kHz. In contrast to other ferroelectric materials,...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0268889 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850248577524170752 |
|---|---|
| author | Nana Sun Kazuki Okamoto Shinnosuke Yasuoka Soshun Doko Naoko Matsui Toshikazu Irisawa Koji Tsunekawa Haidong Lu Alexei Gruverman Hiroshi Funakubo |
| author_facet | Nana Sun Kazuki Okamoto Shinnosuke Yasuoka Soshun Doko Naoko Matsui Toshikazu Irisawa Koji Tsunekawa Haidong Lu Alexei Gruverman Hiroshi Funakubo |
| author_sort | Nana Sun |
| collection | DOAJ |
| description | Impacts of post-heat treatment in a H2-contained (97% Ar and 3% H2) atmosphere on the switching kinetics of (001)-oriented AlScN capacitors are investigated. Fully saturated polarization can be obtained for all capacitors at frequencies of 50 Hz–50 kHz. In contrast to other ferroelectric materials, the domain wall movement behavior does not change after the heat treatment with frequency. The switching behavior follows the Kolmogorov–Avrami–Ishibashi (KAI) model, and the dimension of domain growth, n, values are ∼1–2 for all films before and after the H2-contained heat treatment. The domain nucleation and lateral domain growth in both the electric field- and time-dependent domain dynamics visualized by piezoresponse force microscopy are consistent with the KAI model. The activation energy increases slightly for the film after the heat treatment. This highly resilient switching behavior brings the AlScN films one step closer to realizing the next generation of nonvolatile memory technologies. |
| format | Article |
| id | doaj-art-5750aa7dbcf943dfade868451c063453 |
| institution | OA Journals |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-5750aa7dbcf943dfade868451c0634532025-08-20T01:58:41ZengAIP Publishing LLCAPL Materials2166-532X2025-05-01135051106051106-810.1063/5.0268889Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitorsNana Sun0Kazuki Okamoto1Shinnosuke Yasuoka2Soshun Doko3Naoko Matsui4Toshikazu Irisawa5Koji Tsunekawa6Haidong Lu7Alexei Gruverman8Hiroshi Funakubo9Department of Materials Science and Engineering, Institute of Science Tokyo, Yokohama 226-8502, JapanDepartment of Materials Science and Engineering, Institute of Science Tokyo, Yokohama 226-8502, JapanDepartment of Materials Science and Engineering, Institute of Science Tokyo, Yokohama 226-8502, JapanDepartment of Materials Science and Engineering, Institute of Science Tokyo, Yokohama 226-8502, JapanCanon ANELVA Corporation, 5-1 Kurigi 2-chome, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, JapanCanon ANELVA Corporation, 5-1 Kurigi 2-chome, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, JapanCanon ANELVA Corporation, 5-1 Kurigi 2-chome, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, JapanDepartment of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0299, USADepartment of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0299, USADepartment of Materials Science and Engineering, Institute of Science Tokyo, Yokohama 226-8502, JapanImpacts of post-heat treatment in a H2-contained (97% Ar and 3% H2) atmosphere on the switching kinetics of (001)-oriented AlScN capacitors are investigated. Fully saturated polarization can be obtained for all capacitors at frequencies of 50 Hz–50 kHz. In contrast to other ferroelectric materials, the domain wall movement behavior does not change after the heat treatment with frequency. The switching behavior follows the Kolmogorov–Avrami–Ishibashi (KAI) model, and the dimension of domain growth, n, values are ∼1–2 for all films before and after the H2-contained heat treatment. The domain nucleation and lateral domain growth in both the electric field- and time-dependent domain dynamics visualized by piezoresponse force microscopy are consistent with the KAI model. The activation energy increases slightly for the film after the heat treatment. This highly resilient switching behavior brings the AlScN films one step closer to realizing the next generation of nonvolatile memory technologies.http://dx.doi.org/10.1063/5.0268889 |
| spellingShingle | Nana Sun Kazuki Okamoto Shinnosuke Yasuoka Soshun Doko Naoko Matsui Toshikazu Irisawa Koji Tsunekawa Haidong Lu Alexei Gruverman Hiroshi Funakubo Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors APL Materials |
| title | Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors |
| title_full | Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors |
| title_fullStr | Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors |
| title_full_unstemmed | Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors |
| title_short | Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors |
| title_sort | effect of h2 heat treatment on the switching behavior of ferroelectric alscn capacitors |
| url | http://dx.doi.org/10.1063/5.0268889 |
| work_keys_str_mv | AT nanasun effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT kazukiokamoto effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT shinnosukeyasuoka effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT soshundoko effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT naokomatsui effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT toshikazuirisawa effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT kojitsunekawa effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT haidonglu effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT alexeigruverman effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors AT hiroshifunakubo effectofh2heattreatmentontheswitchingbehaviorofferroelectricalscncapacitors |