STUDY THE EFFECTS OF CONDITIONS OF MOLECULAR BEAM EPITAXY ON THE MORPHOLOGY AND SPECTRAL CHARACTERISTICS OF HETEROSTRUCTURES GE/SI AND GESI/SI

STUDY THE EFFECTS OF CONDITIONS OF MOLECULAR BEAM EPITAXY ON THE MORPHOLOGY AND SPECTRAL CHARACTERISTICS OF HETEROSTRUCTURES GE/SI AND GESI/SI

The paper presents new methods to reduce the rms roughness structures GeSi. By atomic force microscopy studied film samples GeSi, obtained at the MBE. It is noticed that the roughness of the film and the size of growing islands decrease with increasing annealing time silicon wafer at a constant temp...

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Bibliographic Details
Main Authors: Vyacheslav Lapin, Fyodor Maljavin, Igor Sysoev
Format: Article
Language:Russian
Published: North-Caucasus Federal University 2022-09-01
Series:Наука. Инновации. Технологии
Subjects:
молекулярно-лучевая эпитаксия
атомно-силовая микроскопия
комбинационное рассеяние света
гетероструктуры ge<sub>x</sub>si<sub>1-</sub><sub>x</sub>/si
эпитаксиальный рост
сверхструктурные домены
“hut-кластеры”
“dome-кластеры”
эпитаксиальные структуры
molecular beam epitaxy
atomic force microscopy
raman scattering
heterostructures gexsi1-x / si
epitaxial growth
the superstructure domains
"hut-clusters"
"dome-clusters"
epitaxial structures
Online Access:https://scienceit.elpub.ru/jour/article/view/465
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Summary:The paper presents new methods to reduce the rms roughness structures GeSi. By atomic force microscopy studied film samples GeSi, obtained at the MBE. It is noticed that the roughness of the film and the size of growing islands decrease with increasing annealing time silicon wafer at a constant temperature of 850 ° C. The morphology structures LT-Ge / Si, in which the substrate temperature is changed in steps with different number of steps. Revealed that the roughness of the film and the size of growing islands decrease with increasing the number of steps changes in temperature from 300 ° C N to 600 ° C. It is shown that the roughness of the film and the size of the growing islands depend on the nature of changes in the composition of the alloy GexSi1-x thickness at a constant fraction of the integrated Ge x = 0.5. Best results were obtained when the morphology of the gradual change in the concentration of Ge in the film growing process in the time range of 10-90 min. The interrelation of the Raman spectrum of the samples with the character changes in the composition of the alloy. It is shown that for non-contact NDT epitaxial structures based on GexSi1-x promising to use Raman spectroscopy method.
ISSN:2308-4758

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