STUDY THE EFFECTS OF CONDITIONS OF MOLECULAR BEAM EPITAXY ON THE MORPHOLOGY AND SPECTRAL CHARACTERISTICS OF HETEROSTRUCTURES GE/SI AND GESI/SI

The paper presents new methods to reduce the rms roughness structures GeSi. By atomic force microscopy studied film samples GeSi, obtained at the MBE. It is noticed that the roughness of the film and the size of growing islands decrease with increasing annealing time silicon wafer at a constant temp...

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Bibliographic Details
Main Authors: Vyacheslav Lapin, Fyodor Maljavin, Igor Sysoev
Format: Article
Language:Russian
Published: North-Caucasus Federal University 2022-09-01
Series:Наука. Инновации. Технологии
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Online Access:https://scienceit.elpub.ru/jour/article/view/465
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