Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses
Redox-based resistive random access memory (ReRAM) has emerged as a promising technology for next-generation non-volatile memory and neuromorphic computing applications. Among the various ReRAM types, valence change mechanism (VCM) based devices have gained significant attention due to their fast sw...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11075674/ |
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