Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses

Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses

Redox-based resistive random access memory (ReRAM) has emerged as a promising technology for next-generation non-volatile memory and neuromorphic computing applications. Among the various ReRAM types, valence change mechanism (VCM) based devices have gained significant attention due to their fast sw...

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Bibliographic Details
Main Authors: Faisal Munir, Jari Klinkmann, Pascal Stasner, Siyuan Jia, Rainer Waser, Stefan Wiefels
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Redox-based resistive random access memory (ReRAM)
valence change mechanism (VCM)
coplanar waveguide
ultra-fast pulses
linear transition
gradual switching
Online Access:https://ieeexplore.ieee.org/document/11075674/
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