Interface optimization for low-contact resistance between bismuth telluride and barrier metals in thermoelectric generation devices
Thermoelectric generation (TEG) devices with bismuth telluride (Bi2Te3) are most advanced toward commercialization. However, contact resistance at the interface between Bi2Te3 and the barrier metal hinders the thermoelectric conversion efficiency and reliability of TEG devices. In this study, we fab...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0253218 |
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