Effect of substrate orientation on the optical properties of InGaAsN(P) quantum wells
This study examines the effect of substrate orientation on the optical properties of InGaAsN(P) quantum wells using an eight-band k · p Hamiltonian extended to account for strain effects in arbitrary orientations. Numerical simulations were performed for key substrate orientations, including (001),...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | APL Quantum |
| Online Access: | http://dx.doi.org/10.1063/5.0253677 |
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