Fowler–Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin <i>h</i>-BN Layer Dependence and Performance Limits

Fowler–Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin <i>h</i>-BN Layer Dependence and Performance Limits

Hexagonal Boron Nitride (<i>h</i>-BN) is an exceptional dielectric material with significant potential for high-performance electronic and optoelectronic devices. While previous studies have explored its role in GaN-based MIS (metal/insulator/semiconductor) structures, the influence of f...

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Bibliographic Details
Main Authors: Jiarui Zhang, Yikun Li, Shijun Luo, Yan Zhang, Man Luo, Hailu Wang, Chenhui Yu
Format: Article
Language:English
Published: MDPI AG 2025-08-01
Series:Nanomaterials
Subjects:
few-layer <i>h</i>-BN
Fowler–Nordheim tunneling effect
AlGaN-based MIS
TCAD simulation
electrical characteristics
Online Access:https://www.mdpi.com/2079-4991/15/15/1209
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