Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity
In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive stru...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2015-06-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/2/articles/jnep_2015_V7_02023.pdf |
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