Guanine-based spin valve with spin rectification effect for an artificial memory element
Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two differ...
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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2025-01-01
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| Series: | Heliyon |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844024172027 |
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| author | Nicusor Iacob Cristina Chirila Mama Sangaré Andrei Kuncser Anda E. Stanciu Marcela Socol Catalin C. Negrila Mihaela Botea Claudiu Locovei Gabriel Schinteie Aurelian C. Galca Anca Stanculescu Lucian Pintilie Victor Kuncser Bogdana Borca |
| author_facet | Nicusor Iacob Cristina Chirila Mama Sangaré Andrei Kuncser Anda E. Stanciu Marcela Socol Catalin C. Negrila Mihaela Botea Claudiu Locovei Gabriel Schinteie Aurelian C. Galca Anca Stanculescu Lucian Pintilie Victor Kuncser Bogdana Borca |
| author_sort | Nicusor Iacob |
| collection | DOAJ |
| description | Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K. The non-volatile resistance states of the multiferroic spintronic junction with two-terminals are manipulated by a combined action of small external magnetic and electric fields. Thus, the magnetic field controls the relative orientation of the magnetization of the metallic ferromagnetic electrodes, that leads to different magnetoresistance states. The orientation and the magnitude of the electric field controls the orientation of the polarization of the guanine ferroelectric barrier, that leads to different electroresistance states, respectively. Moreover, we have observed a strong interfacial coupling of the two parameters. Consequently, positive and negative magnetoresistance hysteresis loops corresponding to spin rectification effects and non-hysteretic (erased) resistive states are manipulated with the electric field by switching the orientation of the electrical polarization of the organic ferroelectric. |
| format | Article |
| id | doaj-art-50a87f0d5a40498f8ba36656531174a5 |
| institution | Kabale University |
| issn | 2405-8440 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj-art-50a87f0d5a40498f8ba36656531174a52025-01-17T04:50:24ZengElsevierHeliyon2405-84402025-01-01111e41171Guanine-based spin valve with spin rectification effect for an artificial memory elementNicusor Iacob0Cristina Chirila1Mama Sangaré2Andrei Kuncser3Anda E. Stanciu4Marcela Socol5Catalin C. Negrila6Mihaela Botea7Claudiu Locovei8Gabriel Schinteie9Aurelian C. Galca10Anca Stanculescu11Lucian Pintilie12Victor Kuncser13Bogdana Borca14National Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, Romania; Institute of Applied Sciences, University of Sciences, Techniques and Technology of Bamako (USTTB), Bamako, MaliNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, RomaniaNational Institute of Materials Physics, 077125 Magurele, Ilfov, Romania; Corresponding author.Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K. The non-volatile resistance states of the multiferroic spintronic junction with two-terminals are manipulated by a combined action of small external magnetic and electric fields. Thus, the magnetic field controls the relative orientation of the magnetization of the metallic ferromagnetic electrodes, that leads to different magnetoresistance states. The orientation and the magnitude of the electric field controls the orientation of the polarization of the guanine ferroelectric barrier, that leads to different electroresistance states, respectively. Moreover, we have observed a strong interfacial coupling of the two parameters. Consequently, positive and negative magnetoresistance hysteresis loops corresponding to spin rectification effects and non-hysteretic (erased) resistive states are manipulated with the electric field by switching the orientation of the electrical polarization of the organic ferroelectric.http://www.sciencedirect.com/science/article/pii/S2405844024172027Guanine nucleobaseMultiferroic junctionOrganic ferroelectricSpin valveElectroresistanceMagnetoresistance |
| spellingShingle | Nicusor Iacob Cristina Chirila Mama Sangaré Andrei Kuncser Anda E. Stanciu Marcela Socol Catalin C. Negrila Mihaela Botea Claudiu Locovei Gabriel Schinteie Aurelian C. Galca Anca Stanculescu Lucian Pintilie Victor Kuncser Bogdana Borca Guanine-based spin valve with spin rectification effect for an artificial memory element Heliyon Guanine nucleobase Multiferroic junction Organic ferroelectric Spin valve Electroresistance Magnetoresistance |
| title | Guanine-based spin valve with spin rectification effect for an artificial memory element |
| title_full | Guanine-based spin valve with spin rectification effect for an artificial memory element |
| title_fullStr | Guanine-based spin valve with spin rectification effect for an artificial memory element |
| title_full_unstemmed | Guanine-based spin valve with spin rectification effect for an artificial memory element |
| title_short | Guanine-based spin valve with spin rectification effect for an artificial memory element |
| title_sort | guanine based spin valve with spin rectification effect for an artificial memory element |
| topic | Guanine nucleobase Multiferroic junction Organic ferroelectric Spin valve Electroresistance Magnetoresistance |
| url | http://www.sciencedirect.com/science/article/pii/S2405844024172027 |
| work_keys_str_mv | AT nicusoriacob guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT cristinachirila guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT mamasangare guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT andreikuncser guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT andaestanciu guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT marcelasocol guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT catalincnegrila guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT mihaelabotea guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT claudiulocovei guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT gabrielschinteie guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT aureliancgalca guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT ancastanculescu guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT lucianpintilie guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT victorkuncser guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement AT bogdanaborca guaninebasedspinvalvewithspinrectificationeffectforanartificialmemoryelement |