Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation
The electron-traps parameters of the fin-type buried-channel-array transistor (BCAT) in a dynamic random-access memory (DRAM) cell is investigated with a random-telegraph-noise (RTN)-based analysis at various temperatures including 77 K. RTN fluctuation caused by the e--trapping is reduced with decr...
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-08-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379725002219 |
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