Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation

Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation

The electron-traps parameters of the fin-type buried-channel-array transistor (BCAT) in a dynamic random-access memory (DRAM) cell is investigated with a random-telegraph-noise (RTN)-based analysis at various temperatures including 77 K. RTN fluctuation caused by the e--trapping is reduced with decr...

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Bibliographic Details
Main Authors: Sangwon Lee, Ho Jung Lee, Ga Won Yang, Sungju Choi, Jingyu Park, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Ickhyun Song, Dae Hwan Kim
Format: Article
Language:English
Published: Elsevier 2025-08-01
Series:Results in Physics
Subjects:
Cryogenic temperature
Dynamic random access memory (DRAM)
Random telegraph noise (RTN)
Electron trap
Off-current
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379725002219
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