Quantum transport through a constriction in nanosheet gate-all-around transistors
Abstract In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for quantum mechanical effects arising from t...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-05-01
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| Series: | Communications Engineering |
| Online Access: | https://doi.org/10.1038/s44172-025-00435-0 |
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| _version_ | 1850140399583100928 |
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| author | Kyoung Yeon Kim Hong-Hyun Park Seonghoon Jin Uihui Kwon Woosung Choi Dae Sin Kim |
| author_facet | Kyoung Yeon Kim Hong-Hyun Park Seonghoon Jin Uihui Kwon Woosung Choi Dae Sin Kim |
| author_sort | Kyoung Yeon Kim |
| collection | DOAJ |
| description | Abstract In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for quantum mechanical effects arising from the complex device geometries. Here, based on large-scale quantum transport simulations, we demonstrate that quantum geometrical effects in stacked nanosheet GAAFETs significantly impact carrier injection characteristics. Discontinuities in confinement energy at the constriction—the junction between the bulk source/drain and nanosheet channel—cause substantial carrier backscattering. This degradation becomes more severe as electrons experience higher effective energy barriers, and is further exacerbated at lower scattering rate, lower doping concentrations, and near Schottky barriers where electron depletion regions form. Considering these quantum mechanical bottlenecks, proper device optimization for future technology nodes requires a full quantum-based device structure design at the large-scale level, which enables unique optimization strategies beyond conventional classical prediction. |
| format | Article |
| id | doaj-art-4f32577ad3d548c5bb4a5565ff0a293d |
| institution | OA Journals |
| issn | 2731-3395 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Communications Engineering |
| spelling | doaj-art-4f32577ad3d548c5bb4a5565ff0a293d2025-08-20T02:29:51ZengNature PortfolioCommunications Engineering2731-33952025-05-014111110.1038/s44172-025-00435-0Quantum transport through a constriction in nanosheet gate-all-around transistorsKyoung Yeon Kim0Hong-Hyun Park1Seonghoon Jin2Uihui Kwon3Woosung Choi4Dae Sin Kim5Computional & Science Engineering Team, Semiconductor Research and Development Center, Samsung ElectronicsTCAD Laboratory, AHQ Research and Development, Samsung Semiconductor INC.TCAD Laboratory, AHQ Research and Development, Samsung Semiconductor INC.Computional & Science Engineering Team, Semiconductor Research and Development Center, Samsung ElectronicsTCAD Laboratory, AHQ Research and Development, Samsung Semiconductor INC.Computional & Science Engineering Team, Semiconductor Research and Development Center, Samsung ElectronicsAbstract In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for quantum mechanical effects arising from the complex device geometries. Here, based on large-scale quantum transport simulations, we demonstrate that quantum geometrical effects in stacked nanosheet GAAFETs significantly impact carrier injection characteristics. Discontinuities in confinement energy at the constriction—the junction between the bulk source/drain and nanosheet channel—cause substantial carrier backscattering. This degradation becomes more severe as electrons experience higher effective energy barriers, and is further exacerbated at lower scattering rate, lower doping concentrations, and near Schottky barriers where electron depletion regions form. Considering these quantum mechanical bottlenecks, proper device optimization for future technology nodes requires a full quantum-based device structure design at the large-scale level, which enables unique optimization strategies beyond conventional classical prediction.https://doi.org/10.1038/s44172-025-00435-0 |
| spellingShingle | Kyoung Yeon Kim Hong-Hyun Park Seonghoon Jin Uihui Kwon Woosung Choi Dae Sin Kim Quantum transport through a constriction in nanosheet gate-all-around transistors Communications Engineering |
| title | Quantum transport through a constriction in nanosheet gate-all-around transistors |
| title_full | Quantum transport through a constriction in nanosheet gate-all-around transistors |
| title_fullStr | Quantum transport through a constriction in nanosheet gate-all-around transistors |
| title_full_unstemmed | Quantum transport through a constriction in nanosheet gate-all-around transistors |
| title_short | Quantum transport through a constriction in nanosheet gate-all-around transistors |
| title_sort | quantum transport through a constriction in nanosheet gate all around transistors |
| url | https://doi.org/10.1038/s44172-025-00435-0 |
| work_keys_str_mv | AT kyoungyeonkim quantumtransportthroughaconstrictioninnanosheetgateallaroundtransistors AT honghyunpark quantumtransportthroughaconstrictioninnanosheetgateallaroundtransistors AT seonghoonjin quantumtransportthroughaconstrictioninnanosheetgateallaroundtransistors AT uihuikwon quantumtransportthroughaconstrictioninnanosheetgateallaroundtransistors AT woosungchoi quantumtransportthroughaconstrictioninnanosheetgateallaroundtransistors AT daesinkim quantumtransportthroughaconstrictioninnanosheetgateallaroundtransistors |