Quantum transport through a constriction in nanosheet gate-all-around transistors
Abstract In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for quantum mechanical effects arising from t...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
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| Series: | Communications Engineering |
| Online Access: | https://doi.org/10.1038/s44172-025-00435-0 |
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