Calculating the band structure of 3C-SiC using sp 3 d 5 s* + ∆ model
Abstract We report on a semiempirical tight-binding model for 3C-SiC including the effect of sp 3 d 5 s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Oxford International Collaboration Centre Press (OICC press)
2019-02-01
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| Series: | Journal of Theoretical and Applied Physics |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1007/s40094-019-0324-5 |
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