Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates

Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN syn...

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Main Authors: Hua Xu, Kai Li, Zuoquan Tan, Jiaqi Jia, Le Wang, Shanshan Chen
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/15/14/1059
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author Hua Xu
Kai Li
Zuoquan Tan
Jiaqi Jia
Le Wang
Shanshan Chen
author_facet Hua Xu
Kai Li
Zuoquan Tan
Jiaqi Jia
Le Wang
Shanshan Chen
author_sort Hua Xu
collection DOAJ
description Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal–organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices.
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institution Kabale University
issn 2079-4991
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publishDate 2025-07-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj-art-4e9a3c7f181c471c9855749399464a0e2025-08-20T03:56:45ZengMDPI AGNanomaterials2079-49912025-07-011514105910.3390/nano15141059Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating SubstratesHua Xu0Kai Li1Zuoquan Tan2Jiaqi Jia3Le Wang4Shanshan Chen5Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, ChinaBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, ChinaBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, ChinaBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, ChinaBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, ChinaBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, ChinaDirect chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal–organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices.https://www.mdpi.com/2079-4991/15/14/1059h-BNCVDinsulating substratesdirect growth2D materials
spellingShingle Hua Xu
Kai Li
Zuoquan Tan
Jiaqi Jia
Le Wang
Shanshan Chen
Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates
Nanomaterials
h-BN
CVD
insulating substrates
direct growth
2D materials
title Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates
title_full Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates
title_fullStr Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates
title_full_unstemmed Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates
title_short Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates
title_sort recent advances in chemical vapor deposition of hexagonal boron nitride on insulating substrates
topic h-BN
CVD
insulating substrates
direct growth
2D materials
url https://www.mdpi.com/2079-4991/15/14/1059
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