Cryogenic InP HEMTs With Enhanced <italic>f</italic><sub>max</sub> and Reduced On-Resistance Using Double Recess

Cryogenic InP HEMTs With Enhanced <italic>f</italic><sub>max</sub> and Reduced On-Resistance Using Double Recess

Cryogenic InP High-electron-mobility transistors (HEMTs)-based low-noise amplifiers (LNAs) have been applied in deep space exploration, which demands high performance from InP HEMTs. Specifically, at low temperatures, the device needs to achieve low power consumption and high operating frequency. In...

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Bibliographic Details
Main Authors: Yuxuan Chen, Fugui Zhou, Yongheng Gong, Yongbo Su, Wuchang Ding, Jingyuan Shi, Peng Ding, Zhi Jin
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Cryogenic
InP high-electron-mobility transistor (InP HEMT)
double-recess
multilayer cap
on-resistance (RON)
maximum oscillation frequency (fₘₐₓ)
Online Access:https://ieeexplore.ieee.org/document/10948522/
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https://ieeexplore.ieee.org/document/10948522/

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