Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS<sub>2</sub> Films

Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS<sub>2</sub> Films

The effect of different underlying insulators on molybdenum disulfide (MoS2) films deposited using sputtering, which is a physical vapor deposition (PVD) method, was studied. The study reveals that the underlying insulator strongly affects the properties of the deposited PVD-MoS2 films. First, the r...

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Bibliographic Details
Main Authors: Naoki Matsunaga, Shinya Imai, Takanori Shirokura, Yasuhide Mochizuki, Kazuaki Kuwahata, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Transition-metal di-chalcogenide (TMDC)
molybdenum disulfide (MoS2)
radio-frequency (RF) magnetron sputtering
Raman spectroscopy
underlying insulator
density functional theory (DFT)
Online Access:https://ieeexplore.ieee.org/document/10702562/
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