Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters
We have studied the 1.55 μm optical properties of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs quantum wells using a self-consistent calculation combined with the anticrossing model. We have found that the increase of injected carriers’ density induces the increase of optical gain and radiative current dens...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2022/7971119 |
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