A Wideband and High-Power RF Switching Design
This paper presents an RF switch chip with a wide operating bandwidth from 6 to 18 GHz, designed for RF front-end applications in mobile communications. A series-parallel topology combined with a stacked transistor structure was employed to improve power handling while maintaining low insertion loss...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/25/10/3209 |
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