Low-frequency noise of MoTe2 transistor: effects on ambipolar carrier transport and CYTOP doping
Abstract Low-frequency noise (LFN) characteristics of semiconductor devices pose a significant importance for understanding their working principle, particularly concerning material imperfections. Accordingly, substantial research endeavors have focused on characterizing the LFN of devices. However,...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2024-11-01
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| Series: | Discover Nano |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-024-04068-8 |
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