Influence of Cd<sub>х</sub>Hg<sub>1-х</sub>Te epitaxial layers defects on photo-electric parameters of matrix detector devices

Influence of Cd<sub>х</sub>Hg<sub>1-х</sub>Te epitaxial layers defects on photo-electric parameters of matrix detector devices

In spite of the fact that solid solution CdxHg1-xTe is the most sensitive and effective semiconductor material for matrix photodetectors, weak internuclear connection Hg–Cd and high energy диссоциации molecules Tе2 result in formation CdxHg1-xTe epitaxial layers defects in process MBE epitaxial grow...

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Bibliographic Details
Main Authors: V. V. Arbenina, A. S. Kashuba, Е. V. Permikina
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2013-12-01
Series:Тонкие химические технологии
Subjects:
matrix detector devices, matrix photosensitive elements, heteroepitaxial layers, solid solutions cdxhg1-xte, voltage-current characteristic, v-defects, high-resolution electronic microscopy
Online Access:https://www.finechem-mirea.ru/jour/article/view/517
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