Study of a-Si/Al thickness on aluminum-induced crystallization
In this work, the effect of the a-Si/Al ratio on the poly-Si obtained as a result of aluminium-induced crystallization (AIC) of amorphous silicon a-Si at an annealing temperature of 490 °C has been studied. The dendritic shape of the resulting crystal structures suggests a growth model described by...
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2024-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/108/e3sconf_sts2024_01020.pdf |
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