Study of a-Si/Al thickness on aluminum-induced crystallization

In this work, the effect of the a-Si/Al ratio on the poly-Si obtained as a result of aluminium-induced crystallization (AIC) of amorphous silicon a-Si at an annealing temperature of 490 °C has been studied. The dendritic shape of the resulting crystal structures suggests a growth model described by...

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Bibliographic Details
Main Author: Merkulova Irina
Format: Article
Language:English
Published: EDP Sciences 2024-01-01
Series:E3S Web of Conferences
Online Access:https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/108/e3sconf_sts2024_01020.pdf
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