Study of a-Si/Al thickness on aluminum-induced crystallization
In this work, the effect of the a-Si/Al ratio on the poly-Si obtained as a result of aluminium-induced crystallization (AIC) of amorphous silicon a-Si at an annealing temperature of 490 °C has been studied. The dendritic shape of the resulting crystal structures suggests a growth model described by...
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| Format: | Article |
| Language: | English |
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EDP Sciences
2024-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/108/e3sconf_sts2024_01020.pdf |
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| _version_ | 1850206762256302080 |
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| author | Merkulova Irina |
| author_facet | Merkulova Irina |
| author_sort | Merkulova Irina |
| collection | DOAJ |
| description | In this work, the effect of the a-Si/Al ratio on the poly-Si obtained as a result of aluminium-induced crystallization (AIC) of amorphous silicon a-Si at an annealing temperature of 490 °C has been studied. The dendritic shape of the resulting crystal structures suggests a growth model described by diffusion-limited aggregation. The degree of coverage is slightly dependent on the initial ratio of amorphous silicon to aluminium and ranges from 15% to 25%. This is probably explained by the higher rate of secondary crystallization in the upper layer compared to the lower layer. The maximum average crystallite size is reached at a ratio of 0.9 and is 2.7 µm. |
| format | Article |
| id | doaj-art-4a888a04eb80457aa3edbc98760c6f8a |
| institution | OA Journals |
| issn | 2267-1242 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | E3S Web of Conferences |
| spelling | doaj-art-4a888a04eb80457aa3edbc98760c6f8a2025-08-20T02:10:42ZengEDP SciencesE3S Web of Conferences2267-12422024-01-015780102010.1051/e3sconf/202457801020e3sconf_sts2024_01020Study of a-Si/Al thickness on aluminum-induced crystallizationMerkulova Irina0Kutateladze Institute of Thermophysics SB RASIn this work, the effect of the a-Si/Al ratio on the poly-Si obtained as a result of aluminium-induced crystallization (AIC) of amorphous silicon a-Si at an annealing temperature of 490 °C has been studied. The dendritic shape of the resulting crystal structures suggests a growth model described by diffusion-limited aggregation. The degree of coverage is slightly dependent on the initial ratio of amorphous silicon to aluminium and ranges from 15% to 25%. This is probably explained by the higher rate of secondary crystallization in the upper layer compared to the lower layer. The maximum average crystallite size is reached at a ratio of 0.9 and is 2.7 µm.https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/108/e3sconf_sts2024_01020.pdf |
| spellingShingle | Merkulova Irina Study of a-Si/Al thickness on aluminum-induced crystallization E3S Web of Conferences |
| title | Study of a-Si/Al thickness on aluminum-induced crystallization |
| title_full | Study of a-Si/Al thickness on aluminum-induced crystallization |
| title_fullStr | Study of a-Si/Al thickness on aluminum-induced crystallization |
| title_full_unstemmed | Study of a-Si/Al thickness on aluminum-induced crystallization |
| title_short | Study of a-Si/Al thickness on aluminum-induced crystallization |
| title_sort | study of a si al thickness on aluminum induced crystallization |
| url | https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/108/e3sconf_sts2024_01020.pdf |
| work_keys_str_mv | AT merkulovairina studyofasialthicknessonaluminuminducedcrystallization |