Exploration of p-type conductivity in β-Ga2O3 through Se-Mg hyper co-doped: An ion implantation approach
As β-Ga2O3 continues to advance, achieving stable p-type doping has become a key research focus. This study proposes a method to introduce defect energy levels near the conduction band and acceptor doping elements to achieve p-type doped β-Ga2O3. We utilized ion implantation to achieve co-doped Ga2O...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Materials Today Advances |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049825000049 |
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