A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives
The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for correlative electroluminescence (EL) defect l...
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Elsevier
2025-06-01
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| Series: | Power Electronic Devices and Components |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000136 |
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| author | Patrick Diehle Frank Altmann Susanne Hübner Johannes Bruckmeier Richard Neumann Manuel Stabentheiner Clemens Ostermaier |
| author_facet | Patrick Diehle Frank Altmann Susanne Hübner Johannes Bruckmeier Richard Neumann Manuel Stabentheiner Clemens Ostermaier |
| author_sort | Patrick Diehle |
| collection | DOAJ |
| description | The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for correlative electroluminescence (EL) defect localization and 3D transmission electron microscopy (TEM) analysis to determine and quantify related structural defects with nm dimensions. New focused ion beam (FIB) preparation workflows allowing a combined cross-sectional and planar TEM analysis of localized defect sites will be introduced. It will be demonstrated that nm-sized defects and the structure of critical dislocations within the relatively large EL spot area can be identified and quantified. The workflow is exemplarily applied to stressed normally-off p-GaN HEMT devices. The three-dimensional route of a dislocation bunch in relation to the HEMT gate structure is investigated, and the dislocation core structure is visualized by atomically resolved TEM imaging. |
| format | Article |
| id | doaj-art-4a0cc4dbb6724a12a8eb6c30d4b5d649 |
| institution | Kabale University |
| issn | 2772-3704 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Power Electronic Devices and Components |
| spelling | doaj-art-4a0cc4dbb6724a12a8eb6c30d4b5d6492025-08-20T03:25:54ZengElsevierPower Electronic Devices and Components2772-37042025-06-011110008810.1016/j.pedc.2025.100088A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectivesPatrick Diehle0Frank Altmann1Susanne Hübner2Johannes Bruckmeier3Richard Neumann4Manuel Stabentheiner5Clemens Ostermaier6Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany; Corresponding author.Fraunhofer Institute for Microstructure of Materials and Systems IMWS, GermanyFraunhofer Institute for Microstructure of Materials and Systems IMWS, GermanyInfineon Technologies Germany AG, Am Campeon 1-15, 85579 Neubiberg, GermanyInfineon Technologies Germany AG, Am Campeon 1-15, 85579 Neubiberg, GermanyInfineon Technologies Austria AG, Villach, AustriaInfineon Technologies Austria AG, Villach, AustriaThe characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for correlative electroluminescence (EL) defect localization and 3D transmission electron microscopy (TEM) analysis to determine and quantify related structural defects with nm dimensions. New focused ion beam (FIB) preparation workflows allowing a combined cross-sectional and planar TEM analysis of localized defect sites will be introduced. It will be demonstrated that nm-sized defects and the structure of critical dislocations within the relatively large EL spot area can be identified and quantified. The workflow is exemplarily applied to stressed normally-off p-GaN HEMT devices. The three-dimensional route of a dislocation bunch in relation to the HEMT gate structure is investigated, and the dislocation core structure is visualized by atomically resolved TEM imaging.http://www.sciencedirect.com/science/article/pii/S2772370425000136GaN HEMTTEM investigationFIB preparation workflows allowing a combined cross sectional and planar TEM analysisdislocationPhysical failure analysis |
| spellingShingle | Patrick Diehle Frank Altmann Susanne Hübner Johannes Bruckmeier Richard Neumann Manuel Stabentheiner Clemens Ostermaier A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives Power Electronic Devices and Components GaN HEMT TEM investigation FIB preparation workflows allowing a combined cross sectional and planar TEM analysis dislocation Physical failure analysis |
| title | A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives |
| title_full | A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives |
| title_fullStr | A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives |
| title_full_unstemmed | A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives |
| title_short | A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives |
| title_sort | new preparation approach for high resolution tem analysis of electrically active defects in p gan hemt devices from two orthogonal perspectives |
| topic | GaN HEMT TEM investigation FIB preparation workflows allowing a combined cross sectional and planar TEM analysis dislocation Physical failure analysis |
| url | http://www.sciencedirect.com/science/article/pii/S2772370425000136 |
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