A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for correlative electroluminescence (EL) defect l...

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Bibliographic Details
Main Authors: Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier
Format: Article
Language:English
Published: Elsevier 2025-06-01
Series:Power Electronic Devices and Components
Subjects:
GaN HEMT
TEM investigation
FIB preparation workflows allowing a combined cross sectional and planar TEM analysis
dislocation
Physical failure analysis
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000136
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http://www.sciencedirect.com/science/article/pii/S2772370425000136

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